Semiconductor package and manufacturing method thereof

ABSTRACT

A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first semiconductor die, a second semiconductor die, a molding compound, a heat dissipation module and an adhesive material. The first and second semiconductor dies are different types of dies and are disposed side by side. The molding compound encloses the first and second semiconductor dies. The heat dissipation module is located directly on and in contact with the back sides of the first and second semiconductor dies. The adhesive material is filled and contacted between the heat dissipation module and the molding compound. The semiconductor package has a central region and a peripheral region surrounding the central region. The first and second semiconductor dies are located within the central region. A sidewall of the heat dissipation module, a sidewall of the adhesive material and a sidewall of the molding compound are substantially coplanar.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of and claims thepriority benefit of a prior application Ser. No. 17/876,554, filed onJul. 29, 2022. The prior application Ser. No. 17/876,554 is a divisionalapplication of and claims the priority benefit of a prior applicationSer. No. 16/874,621, filed on May 14, 2020. The prior application Ser.No. 16/874,621 is a divisional application of and claims the prioritybenefit of a prior application Ser. No. 15/993,615, filed on May 31,2018. The entirety of each of the above-mentioned patent applications ishereby incorporated by reference herein and made a part of thisspecification.

BACKGROUND

As electronic products are continuously miniaturized, heat dissipationof the packaged semiconductor die(s) has become an important issue forpackaging technology. In addition, for multi-die packages, thearrangement of the dies and the corresponding connecting elements hasimpacts on data transmission speed among semiconductor dies andreliability of the packaged products.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the disclosure, and are incorporated in and constitutea part of this specification. The drawings illustrate exemplaryembodiments of the disclosure and, together with the description, serveto explain the principles of the disclosure.

FIG. 1 is an exemplary flow chart showing the process steps of amanufacturing method of a semiconductor package according to someembodiments of the present disclosure.

FIG. 2A through FIG. 2H are schematic cross-sectional views illustratingintermediate structures at various stages according to the manufacturingmethod of semiconductor package shown in FIG. 1 .

FIG. 2I through FIG. 2K are schematic cross-sectional views illustratingsemiconductor packages according to some embodiments of the presentdisclosure.

FIG. 3A through FIG. 3C are schematic cross-sectional views illustratingintermediate structures at various stages during the manufacturingmethod of semiconductor package according to some embodiments.

FIG. 3D is a schematic cross-sectional view illustrating a semiconductorpackage according to some embodiments of the present disclosure.

FIG. 4A through FIG. 4C are schematic cross-sectional views illustratingintermediate structures at various stages during the manufacturingmethod of semiconductor package according to some embodiments.

FIG. 4D is a schematic cross-sectional view illustrating a semiconductorpackage according to some embodiments of the present disclosure.

DESCRIPTION OF THE EMBODIMENTS

The following disclosure provides many different embodiments orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Other features and processes may also be included. For example, testingstructures may be included to aid in the verification testing of the 3Dpackaging or 3DIC devices. The testing structures may include, forexample, test pads formed in a redistribution layer or on a substratethat allows the testing of the 3D packaging or 3DIC, the use of probesand/or probe cards, and the like. The verification testing may beperformed on intermediate structures as well as the final structure.Additionally, the structures and methods disclosed herein may be used inconjunction with testing methodologies that incorporate intermediateverification of known good dies to increase the yield and decreasecosts.

FIG. 1 is an exemplary flow chart showing the process steps of amanufacturing method of a semiconductor package 100A according to someembodiments of the present disclosure. FIG. 2A through FIG. 2H areschematic cross-sectional views illustrating intermediate structures atvarious stages according to the manufacturing method of thesemiconductor package 100A shown in FIG. 1 .

Referring to FIG. 1 and FIG. 2A, step S100 is performed, and a pluralityof semiconductor dies are placed on a provided carrier 110. In someembodiments, the carrier 110 is a glass substrate. An adhesive layer 112may be formed on the carrier 110 before the semiconductor dies areplaced on the carrier 110. In some embodiments, the adhesive layer 112may be a single layer, such as a light-to-heat conversion (LTHC) releaselayer or a thermal release layer. In other embodiments, the adhesivelayer 112 may include multiple layers, including a release layer and adie attach film (not shown) sequentially formed on the carrier 100.

In some embodiments, the semiconductor dies may respectively include alogic die, such as a central processing unit (CPU) die, a graphicprocessing unit (GPU) die, a mobile application die, a micro controlunit (MCU) die, an input-output (I/O) die, a baseband (BB) die, anapplication processor (AP) die or a memory die such as high bandwidthmemory die. For instance, the semiconductor dies may include a firstsemiconductor die 120 and a second semiconductor die 122. In someembodiments, the first semiconductor die 120 and the secondsemiconductor die 122 are different types of dies. In some embodiments,the first semiconductor die 120 is a logic die, while the secondsemiconductor die 122 is a memory die. The first semiconductor die 120and the second semiconductor die 122 are disposed side by side on thecarrier 110. The first semiconductor die 120 may be spaced apart fromthe second semiconductor die 122 by a spacing 124. Those skilled in theart may adjust the number and spacing of the semiconductor diesaccording to design requirements, the present disclosure is not limitedthereto. The first semiconductor die 120 is attached to the carrier 110by a back side 120 b, and a front side 120 a of the first semiconductordie 120 is exposed. Similarly, the second semiconductor die 122 isattached to the carrier 110 by a back side 122 b, and a front side 122 aof the second semiconductor die 122 is exposed. In some embodiments, thefront side 120 a of the first semiconductor die 120 and the front side122 a of the second semiconductor die 122 respectively expose aplurality of conductive pads 126, which are respectively coupled to theactive devices (not shown) formed in the first semiconductor die 120 andthe second semiconductor die 122. In alternative embodiments, ratherthan the conductive pads 126, a plurality of conductive pillars (notshown) may be disposed at the front side 120 a of the firstsemiconductor die 120 and at the front side 122 a of the secondsemiconductor die 122.

Referring to FIG. 1 and FIG. 2B, step S102 is performed, and a moldingcompound 130 is formed on the carrier 110. In some embodiments, theformation of the molding compound 130 may include forming a moldingcompound material on the carrier 110 and over the first semiconductordie 120 and the second semiconductor die 122. Afterward, a planarizationoperation, such as a chemical mechanical polish (CMP) process or agrinding process, may be performed on the molding compound material toexpose the conductive pads 126 at the front side 120 a of the firstsemiconductor die 120 and the front side 122 a of the secondsemiconductor die 122, so as to form the molding compound 130. As such,a front side 130 a of the molding compound 130 may be coplanar with thefront side 120 a of the first semiconductor die 120 and the front side122 a of the second semiconductor die 122. In addition, the spacing 124between the first semiconductor die 120 and the second semiconductor die122 are filled by a central portion 130-1 of the molding compound 130. Aperipheral portion 130-2 of the molding compound 130 surrounds the firstsemiconductor die 120 and the second semiconductor die 122. In otherwords, sidewalls of the first and second semiconductor dies 120 and 122are enclosed by the central and peripheral portions 130-1 and 130-2 ofthe molding compound 130. In some embodiments, a material of moldingcompound 130 may include epoxy resin, polyimide, silica, a combinationthereof or the like. The molding compound 130 and the first and secondsemiconductor dies 120 and 122 can be referred as a package structure ora reconstructed wafer, and has a central region CR and a peripheralregion PR. The central region CR is surrounded by the peripheral regionPR. The first and second semiconductor dies 120 and 122 and the centralportion 130-1 of the molding compound 130 are located within the centralregion CR. The peripheral portion 130-2 of the molding compound 130 islocated within the peripheral region PR.

Referring to FIG. 1 and FIG. 2C, step S104 is performed, and aredistribution structure 140 is formed on the front side 120 a of thefirst semiconductor die 120, the front side 122 a of the secondsemiconductor die 122 and the front side 130 a of the molding compound130. The redistribution structure 140 contacts the front side 120 a ofthe first semiconductor die 120, the front side 122 a of the secondsemiconductor die 122 and the front side 130 a of the molding compound130 by a back side 140 b. Accordingly, a front side 140 a of theredistribution structure 140 is exposed. The redistribution structure140 is electrically coupled to the conductive pads 126 formed at thefront side 120 a of the first semiconductor die 120 and the front side122 a of the second semiconductor die 122. In some embodiments, theredistribution structure 140 includes a plurality of dielectric layersILD and a plurality of redistribution layers RDL. The dielectric layerILD and the redistribution layer RDL are alternately stacked on thefront side 120 a of the first semiconductor die 120, the front side 122a of the second semiconductor die 122 and the front side 130 a of themolding compound 130. A plurality of conductive vias CV are electricallyconnected between adjacent redistribution layers RDL, and a plurality ofconductive plugs PG are electrically connected between the bottommostredistribution layer RDL and the conductive pads 126 formed at the frontside 120 a of the first semiconductor die 120 and the front side 122 aof the second semiconductor die 122. A material of the dielectric layerILD may include silicon oxide, silicon nitride, polybenzoxazole (PBO),polyimide (PI), benzocyclobutene (BCB), a combination thereof or thelike. A material of the redistribution layer RDL may include copper,nickel, titanium, a combination thereof or the like. In someembodiments, materials of the redistribution layers RDL, the conductivevias CV and the conductive plugs PG may be identical. Since theredistribution structure 140 extends from the central region CR into theperipheral region PR, an available area of package is expanded, and afan-out structure is constructed.

Referring to FIG. 1 and FIG. 2D, in some embodiments, step S106 isperformed, and a plurality of electrical connectors 144 are disposed atthe front side 140 a of the redistribution structure 140. Before formingthe electrical connector 144, under bump metallurgies (UBMs) 142 areformed on the front side 140 a of the redistribution structure 140. Insome embodiments, a material of the UBMs 142 may include nickel, copper,titanium, a combination thereof or the like. In some embodiments, theUBMs 142 extends into the topmost dielectric layer ILD of theredistribution structure 140, and electrically connects with the topmostredistribution layer RDL of the redistribution structure 140. As such,the UBMs 142 are electrically connected between the redistributionstructure 140 and the electrical connectors 144. In some embodiments,the electrical connectors 144 are solder balls and/or bumps, such ascontrolled collapse chip connection (C4), electroless nickel immersionGold (ENIG), electroless nickel electroless palladium immersion goldtechnique (ENEPIG) formed bumps or the like. In these embodiments, thebumps may include a conductive material such as solder, copper, or gold.The electrical connectors may be formed by suitable methods such asevaporation, electroplating, printing, solder transfer, ball placementor the like. In addition, a reflow may be performed in order to shapethe material into the desired bump shapes.

Referring to FIG. 1 and FIG. 2E, step S108 is performed, and the carrier110 is removed. In some embodiments, the adhesive layer 112 includes aLTHC layer or a thermal release layer, and the carrier 110 is detachedfrom the back side 120 b of the first semiconductor die 120, the backside 122 b of the second semiconductor die 122 and the back side of themolding compound 130 as the adhesive layer 112 loses its adhesiveproperty when exposed to light or heat. That is, the carrier 110 and theadhesive layer 112 are detached and separated from the firstsemiconductor die 120, the second semiconductor die 122 and the moldingcompound 130, and then removed. As such, the back side 120 b of thefirst semiconductor die 120, the back side 122 b of the secondsemiconductor die 122 and the back side 130 b of the molding compound130 are exposed. In some embodiments, the entire structure may beflipped over and attached to a tape 150 before or after the carrier 110and the adhesive layer 112 are removed.

In other embodiments, the adhesive layer 112 includes a release layerand a die attach film (not shown) sequentially formed on the carrier110. In these embodiments, the carrier 110 and the release layer of theadhesive layer 112 may be detached from the first and secondsemiconductor dies 120 and 122 and the molding compound 130 when exposedto light or heat, and the die attach film may be remained on the backside 120 b of the first semiconductor die 120, and the back side 122 bof the second semiconductor die 122 and the back side 130 b of themolding compound 130. Subsequently, the remained die attach film of theadhesive layer 112 may be removed by, for instance, by a strippingprocess, an etching process and/or a cleaning process.

Referring to FIG. 1 , FIG. 2F and FIG. 2G, step S110 is performed, and aheat dissipation module 180 is formed on the back side 120 b of thefirst semiconductor die 120, the back side 122 b of the secondsemiconductor die 122 and the molding compound 130. In some embodiments,the formation of the heat dissipation module 180 may include sub-stepsof forming a thermal interfacial pattern 160 (as shown in FIG. 2F) andproviding a heat spreader 170 (as shown in FIG. 2G) on the thermalinterfacial pattern 160.

Referring to FIG. 2F, the thermal interfacial pattern 160 is formed onthe back side 120 b of the first semiconductor die 120 and the back side122 b of the second semiconductor die 122. In some embodiments, thethermal interfacial pattern 160 is directly contacted with the back side120 b of the first semiconductor die 120 and the back side 122 b of thesecond semiconductor die 122. In some embodiments, the thermalinterfacial pattern 160 covers or contacts the central portion 130-1 ofthe molding compound 130 that is located between the first semiconductordie 120 and the second semiconductor die 122. That is, the thermalinterfacial pattern 160 may span across the whole central region CR. Inaddition, in some embodiments, the thermal interfacial pattern 160 maynot cover the peripheral portion 130-2 of the molding compound 130surrounding the first and second semiconductor dies 120 and 122. Inalternative embodiments, the thermal interfacial pattern 160 maypartially cover the peripheral portion 130-2 of the molding compound130. In other words, the thermal interfacial pattern 160 may or may notspan into the peripheral region PR. Either way, the thermal interfacialpattern 160 does not completely cover the peripheral region PR. In someembodiments, a formation method of the thermal interfacial pattern 160may include a dispensing process, a coating process, a printing process,a combination or the like. In addition, a curing process may beperformed on a material of the thermal interfacial pattern 160 after itis formed by the above-mentioned method. In some embodiments, athickness of the thermal interfacial pattern 160 may range from 10 μm to200 μm. A material of the thermal interfacial pattern 160 may include acomposite material containing polymer and metal particles (or metaloxide particles). For instance, a material of the thermal interfacialpattern 160 may include silicone mixed with particles, such as aluminaparticles, zinc oxide particles or silver particles.

In some embodiments, step S112 of disposing an adhesive material 190 onthe back side 130 b of the molding compound 130 follows the sub-step offorming the thermal interfacial pattern 160, and precedes the sub-stepof providing the heat spreader 170 on the thermal interfacial pattern160 (as shown in FIG. 2G). In these embodiments, the adhesive material190 is formed, and the thermal interfacial pattern 160 is surrounded bythe adhesive material 190. In other words, the adhesive material 190 islocated in the peripheral region PR. In some embodiments, a formationmethod of the adhesive material 190 may include a dispense process. Amaterial of the adhesive material 190 may include epoxy or siliconebased materials. A thickness of the adhesive material 190 may besubstantially identical with or greater than the thickness of thethermal interfacial pattern 160, which may range from 10 μm to 200 μm.

Referring to FIG. 2G, the heat spreader 170 is then provided on thethermal interfacial pattern 160. As such, the thermal interfacialpattern 160 is sandwiched between the first and second semiconductordies 120 and 122 and the heat spreader 170. A material of the heatspreader 170 may include steel, copper, a combination thereof or thelike. In some embodiments, a thickness of the heat spreader 170 mayrange from 300 μm to 3000 μm. In some embodiments, the heat spreader 170is extended from above the thermal interfacial pattern 160 into theperipheral region PR, and covers the peripheral portion 130-2 of themolding compound 130. In other words, the heat dissipation module 180including the thermal interfacial pattern 160 and the heat spreader 170spans from the central region CR into the peripheral region PR. As such,the adhesive material 190 is sandwiched between the heat spreader 170and the molding compound 130 in the peripheral region PR. In someembodiments, the adhesive material 190 is in contact with the back side130 b of the molding compound 130, a front side 170 a of the heatspreader 170 and the sidewall 160S of the thermal interfacial pattern160. The thickness of the adhesive material 190 may be substantiallyidentical with the thickness of the thermal interfacial pattern 160 oncethe heat spreader 170 has been disposed and pressed from top of the heatspreader 170. In some embodiments, a curing process may be performed onthe adhesive material 190 after the heat spreader 170 has been disposed.

In alternative embodiments, the sub-steps of forming the thermalinterfacial pattern 160 and providing the heat spreader 170 may precedethe step S112 of disposing the adhesive material 190. In theseembodiments, the adhesive material 190 is filled into the space betweenthe heat spreader 170 and the back side 130 b of the molding compound130. Subsequently, a curing process may be performed on the adhesivematerial 190.

In some embodiments, a singulation process, such as a sawing process ora cutting process, is performed on the current structure. In someembodiments, the current structure is singulated along scribe lines SC.An extension direction of the scribe lines SC is substantially parallelto the sidewalls of the first and second semiconductor dies 120 and 122,and the scribe lines SC may be extended across the peripheral portion130-2 of the molding compound 130. The tape 150 may be detached from thesingulated structure. As shown in FIG. 2H, the singulated structure maycontain multiple semiconductor dies (e.g., the first semiconductor die120 and the second semiconductor die 122), and may be referred as amulti-die package structure. In some embodiments, a sidewall of the heatspreader 170, a sidewall of the adhesive material 160 and a sidewall ofthe molding compound 130 are substantially coplanar with one another.

In some embodiments, after the singulation process, the redistributionstructure 140 and the electrical connectors 144 are further mounted to apackage substrate PKS, thus completing the semiconductor package 100A.In some embodiments, the electrical connectors 144 are bonded toconductive pads CP of the package substrate PKG through a solder flux byperforming a reflow process. As such, the redistribution structure 140and the electrical connectors 144 are located in between the first andsecond semiconductor dies 120 and 122 and the package substrate PKS. Insome embodiments, the package substrate PKS may include a printedcircuit board (PCB) or an organic package substrate. For example, theorganic package substrate may include a flexible organic packagesubstrate, a core organic package substrate or a core-less organicpackage substrate. In some embodiments, an underfill (not shown) isformed to fill a space between the redistribution structure 140, theelectrical connectors 144 and the package substrate PKS. In someembodiments, the underfill surrounds each of the electrical connectors144. For instance, a material of the underfill may include epoxy resin,silica rubber, a combination thereof or the like.

So far, the semiconductor package 100A according to some embodiments hasbeen fabricated. As compared to a package-on-package (POP) structure,the back sides of the back side 120 b of the first semiconductor die 120and the back side 122 b of the second semiconductor die 122 in thesemiconductor package 100A according to some embodiments of the presentdisclosure can be directly contacted with the heat dissipation module180. As such, a heat path can be directly formed at the back side 120 bof the first semiconductor die 120 and the back side 122 b of the secondsemiconductor die 122. Therefore, an efficient heat dissipation can beattained in the semiconductor package 100A. In addition, as compared tothe POP structure, multiple semiconductor dies (e.g., the firstsemiconductor die 120 and the second semiconductor die 122) in thesemiconductor package 100A according to some embodiments in the presentdisclosure can be electrically coupled through the redistributionstructure 140. Thus, a data transmission speed among the semiconductordies can be improved. In some embodiments, the singulation process canbe performed after the heat dissipation module 180 is disposed on theback side 120 b of the first semiconductor die 120 and the back side 122b of the second semiconductor die 122. As such, a sidewall of the heatdissipation module 180, a sidewall of the adhesive material 190 and asidewall of the molding compound 130 are substantially coplanar with oneanother. In addition, a mechanical strength of the to-be-singulatedpackage structure (also known as a reconstructed wafer) can be enhanced.Thus, a warpage of the package structure including the first and secondsemiconductor dies 120 and 122 and the molding compound 130 can bereduced during the singulation process. Furthermore, in someembodiments, by disposing the adhesive material 190 between the heatdissipation module 180 (e.g., the heat spreader 170 of the heatdissipation module 180) and the molding compound 130 (e.g., theperipheral portion 130-2 of the molding compound 130), an adhesiveproperty between the heat dissipation module 180 and the moldingcompound 130 can be improved. Therefore, a delamination problem at aninterface between the heat dissipation module 180 and the moldingcompound 130 can be avoided.

FIG. 2I is a schematic cross-sectional view illustrating a semiconductorpackage 100B according to some embodiments of the present disclosure.The semiconductor package 100B is similar to the semiconductor package100A as shown in FIG. 2H, difference therebetween will be discussed, andthe same part will not be described again.

Referring to FIG. 2I, a thermal interfacial pattern 260 does not coveror does not completely cover the central portion 130-1 of the moldingcompound 130. In some embodiments, a sidewall of the thermal interfacialpattern 260 is aligned with a sidewall of the central portion 130-1 ofthe molding compound 130. In alternative embodiments, the thermalinterfacial pattern 260 partially covers the central portion 130-1 ofthe molding compound 130. An adhesive material 290 is further formed onthe central portion 130-1 of the molding compound 130. In other words, aspace 174 between the front side 170 a of the heat spreader 170 and thecentral portion 130-1 of the molding compound 130 is filled by a portionof the adhesive material 290. In some embodiments, the space 174 isfilled up by the adhesive material 290.

FIG. 2J is a schematic cross-sectional view illustrating a semiconductorpackage 100C according to some embodiments of the present disclosure.The semiconductor package 100C is similar to the semiconductor package100A as shown in FIG. 2H, difference therebetween will be discussed, andthe same part will not be described again.

Referring to FIG. 2J, a thickness 390T of the adhesive material 390 isgreater than the thickness of the thermal interfacial pattern 160. Insome embodiments, the thickness 390T of the adhesive material 390 may begreater than 10 μm, and less than or equal to 2800 μm, whereas thethickness of the thermal interfacial pattern 160 may range from 10 μm to200 μm. In addition, the heat spreader 270 has a bottom portion 270-1and a top portion 270-2 located on top of the bottom portion 270-1. Thebottom portion 270-1 of the heat spreader 270 is located between thethermal interfacial pattern 160 and the top portion 270-2 of the heatspreader 270. The bottom portion 270-1 of the heat spreader 270 issurrounded by the adhesive material 390. The bottom portion 270-1 of theheat spreader 270 spans across the central region CR, and covers thefirst and second semiconductor dies 120 and 122 and the central portion130-1 of the molding compound 130. In some embodiments, a sidewall ofthe bottom portion 270-1 of the heat spreader 270 is substantiallyaligned with the sidewall of the thermal interfacial pattern 160. Thetop portion 270-2 of the heat spreader 270 is extended from above thebottom portion 270-1 of the heat spreader 270 into the peripheral regionPR, and covers the adhesive material 390 and the peripheral portion130-2 of the molding compound 130. In some embodiments, a ratio of thethickness 270T1 of the bottom portion 270-1 of the heat spreader 270with respect to a total thickness 270T of the heat spreader 270 mayrange from 0.01 to 0.8. In some embodiments, a sum of the thickness270T1 of the bottom portion 270-1 of the heat spreader 270 and thethickness of the thermal interfacial pattern 160 is substantially equalto the thickness 390T of the adhesive material 390. The total thickness270T of the heat spreader 270 is a sum of the thickness 270T1 of thebottom portion 270-1 and a thickness 270T2 of the top portion 270-2 ofthe heat spreader 270. For instance, the total thickness 270T of theheat spreader 270 may range from 300 μm to 3000 μm. In theseembodiments, the thickness 270T1 of the bottom portion 270-1 of the heatspreader 270 may range from 3 μm to 2400 μm. In addition, the 270T2 ofthe top portion 270-2 of the heat spreader 270 may range from 297 μm to600 μm.

In these embodiments, a space between the top portion 270-2 of the heatspreader 270 and the molding compound 130 is filled by the adhesivematerial 390. As such, the adhesive material 390 is in contact with abottom surface of the top portion 270-2, and further in contact with asidewall of the bottom portion 270-1. Accordingly, an area of theinterface between the heat dissipation module 180 (e.g., the heatspreader 270 of the heat dissipation module 180) and the adhesivematerial 390 is increased. Thus, an adhesive property between the heatdissipation module 180 (e.g., the heat spreader 270 of the heatdissipation module 180) and the molding compound 130 can be furtherimproved.

FIG. 2K is a schematic cross-sectional view illustrating a semiconductorpackage 100D according to some embodiments of the present disclosure.The semiconductor package 100D is similar to the semiconductor package100C as shown in FIG. 2J, difference therebetween will be discussed, andthe same part will not be described again.

Referring to FIG. 2K, the thermal interfacial pattern 260 does notcompletely cover the central portion 130-1 of the molding compound 130.In some embodiments, a sidewall of the thermal interfacial pattern 260is aligned with a sidewall of the central portion 130-1 of the moldingcompound 130. In alternative embodiments, the thermal interfacialpattern 260 partially covers the central portion 130-1 of the moldingcompound 130. The adhesive material 390 is further formed on the centralportion 130-1 of the molding compound 130. In other words, a space 174between the front side 270 a of the heat spreader 270 (i.e., the frontside 270 a of the bottom portion 270-1 of the heat spreader 270) and thecentral portion 130-1 of the molding compound 130 is filled by theadhesive material 390. In some embodiments, the space 174 is filled upby the adhesive material 390. In some embodiments, a portion of theadhesive material 390 located between the central portion 130-1 of themolding compound 130 and the bottom portion 270-1 of the heat spreader270 has a thickness 390T1, which may be identical with a thickness ofthe thermal interfacial pattern 160. Another portion of the adhesivematerial 390 located between the peripheral portion 130-2 of the moldingcompound 130 and the top portion 270-2 of the heat spreader 270 has athickness 390-2. In some embodiments, the thickness 390-2 is greaterthan the thickness 390-1. For instance, the thickness 390-2 may rangefrom 10 μm to 2800 μm. The thickness 390-1 may range from 7 μm to 200μm.

FIG. 3A through FIG. 3C are schematic cross-sectional views illustratingintermediate structures at various stages during the manufacturingmethod of a semiconductor package 200A according to some embodiments.The manufacturing method of the semiconductor package 200A is similar tothe manufacturing method of the semiconductor package 100A as shown inFIG. 2A through FIG. 2H, difference therebetween will be discussed, andthe same part will not be described again.

Referring to FIG. 1 and FIG. 3A, the step S100 through the step S108 areperformed. In some embodiments, the step S112 precedes the step S110. Instep S112, an adhesive material 360 is formed on the back side 130 b ofthe molding compound 130. In some embodiments, the adhesive material 360is a blanket layer that covers the back side 120 b of the firstsemiconductor die 120, the back side 122 b of the second semiconductordie 122 and the back side 130 b of the molding compound 130. In otherwords, the adhesive material 360 spans across the central region CR andthe peripheral region PR. In some embodiments, the adhesive material 360is in direct contact with the back sides of the semiconductor dies andthe back side 130 b of the molding compound 130. In some embodiments, amaterial of the adhesive material 360 may include titanium, tantalum,chromium, a combination thereof or the like. A formation method of theadhesive material 360 may include physical vapor deposition (PVD), suchas sputtering. A thickness of the adhesive material 360 may range from100 nm to 2000 nm.

Referring to FIG. 1 and FIG. 3B, the step S110 is performed, and a heatdissipation module 380 is formed on the back side 120 b of the firstsemiconductor die 120, the back side 122 b of the second semiconductordie 122 and the molding compound 130. In some embodiments, the heatdissipation module 380 includes a plurality of heat dissipation layers,such as a first heat dissipation layer 370 and a second heat dissipationlayer 375. The first heat dissipation layer 370 and the second heatdissipation layer 375 are sequentially formed on the adhesive material360. As such, the first heat dissipation layer 370 is stacked betweenthe adhesive material 360 and the second heat dissipation layer 375. Insome embodiments, the first heat dissipation layer 370 and the secondheat dissipation layer 375 are blanket layers that cover the moldingcompound 130 and the first and second semiconductor dies 120 and 122. Inother words, in some embodiments, the first and second heat dissipationlayers 370 and 375 span across the central region CR and the peripheralregion PR.

In some embodiments, materials of the first heat dissipation layer 370and the second heat dissipation layer 375 may include metal or metalalloy. For instance, a material of the first heat dissipation layer 370may include copper, and a material of the second heat dissipation layer375 may include nickel. As such, the second heat dissipation layer 375can protect the first heat dissipation layer 370 from being oxidized inambient atmosphere. A formation method of the first heat dissipationlayer 370 and the second heat dissipation layer 375 may include platingprocess, such as electroplating, electroless plating or chemicalplating. A seed layer may be formed, by sputtering, on the adhesivematerial 360 before forming the first heat dissipation layer 370 and thesecond heat dissipation layer 375. A thickness of the first heatdissipation layer 370 may range from 1 μm to 100 μm. A thickness of thesecond heat dissipation layer 375 may range from 0.1 μm to 30 μm. Sincethe heat dissipation module 380 is relatively thin, it is advantageousfor the heat dissipation module 380 to remove heat from the first andsecond semiconductor dies.

In alternative embodiments, the heat dissipation module 380 furtherincludes a third heat dissipation layer (not shown). The thirddissipation layer is disposed between the adhesive material 360 and thefirst heat dissipation layer 370. A material of the third heatdissipation layer may include nickel. A thickness of the third heatdissipation layer may range from 0.1 μm to 30 μm.

In some embodiments, a singulation process is performed on the currentstructure. The tape 150 may be detached from the singulated structure.As shown in FIG. 3C, the singulated structure may contain multiplesemiconductor dies (e.g., the first semiconductor die 120 and the secondsemiconductor die 122), and may be referred as a multi-die packagestructure. In some embodiments, a sidewall of the heat dissipationmodule 380, a sidewall of the adhesive material 360 and a sidewall ofthe molding compound 130 are substantially coplanar with one anotherafter the singulation process. In some embodiments, after thesingulation process, the redistribution structure 140 and the electricalconnectors 144 are further mounted to a package substrate PKS, thuscompleting the semiconductor package 200A.

FIG. 3D is a schematic cross-sectional view illustrating a semiconductorpackage 200B according to some embodiments of the present disclosure.The semiconductor package 200B is similar to the semiconductor package200A as shown in FIG. 3C, difference therebetween will be discussed, andthe same part will not be described again.

Referring to FIG. 3D, in some embodiments, the first heat dissipationlayer 370 may not be a blanket layer. Instead, the first heatdissipation layer 370 covers the first and second semiconductor dies 120and 122 and the central portion 130-1 of the molding compound 130,without completely covering the peripheral portion 130-2 of the moldingcompound 130. In these embodiments, the seed layer (not shown) formedbetween the first heat dissipation layer 370 and the adhesive material360 may be patterned, to at least partially expose the peripheralportion 130-2 of the molding compound 130. That is, the first heatdissipation layer 370 does not span across the whole area of theperipheral region PR. Correspondingly, the second heat dissipation layer375 is formed over the first heat dissipation layer 370, and may cover atop surface and a sidewall of the first heat dissipation layer 370.

FIG. 4A through FIG. 4C are schematic cross-sectional views illustratingintermediate structures at various stages during the manufacturingmethod of a semiconductor package 300A according to some embodiments.The manufacturing method of the semiconductor package 300A is similar tothe manufacturing method of the semiconductor package 200A as shown inFIG. 3A through FIG. 3C, difference therebetween will be discussed, andthe same part will not be described again.

Referring FIG. 1 and FIG. 4A, the step S100 through the step S108 andthe step S112 are performed. Subsequently, a mask pattern PR is formedon the adhesive material 360. The mask pattern PR covers the centralportion 130-1 and the peripheral portion 130-2 of the molding compound130, and has an opening P over the first and second semiconductor dies120 and 122. In other words, a bottom surface of the opening P isvertically overlapped with the first and second semiconductor dies 120and 122. In some embodiments, a material of the mask pattern PR mayinclude photoresist, silicon oxide, silicon nitride or the like.

Referring to FIG. 1 and FIG. 4B, the step S110 is performed, a heatdissipation module 480 is formed on the back side 120 b of the firstsemiconductor die 120 and the back side 122 b of the secondsemiconductor die 122. The heat dissipation module 480 is formed in theopening P of the mask pattern PR. In some embodiments, the heatdissipation module 480 includes a first heat dissipation layer 470 and asecond heat dissipation layer 475 sequentially formed in the opening P.As such, the first heat dissipation layer 470 and the second heatdissipation layer 475 cover the back side 120 b of the firstsemiconductor die 120 and the back side 122 b of the secondsemiconductor die 122 without covering the molding compound 130. Inother words, the first and second heat dissipation layers 470 and 475may not vertically overlapped with the central and peripheral portions130-1 and 130-2 of the molding compound 130. In some embodiments, asidewall of the heat dissipation module 480 is aligned with sidewalls ofthe first and second semiconductor dies 120 and 122.

Referring to FIG. 1 and FIG. 4C, the mask pattern PR is removed.Accordingly, the heat dissipation module 480 exposes a portion of theadhesive material 360. A singulation process is performed on the currentstructure. In some embodiments, a sidewall of the adhesive material 360and a sidewall of the molding compound 130 are substantially coplanar.The tape 150 may be detached from the singulated structure. In someembodiments, after the singulation process, the redistribution structure140 and the electrical connectors 144 are further mounted to a packagesubstrate PKS, thus completing the semiconductor package 300A.

FIG. 4D is a schematic cross-sectional view illustrating a semiconductorpackage 300B according to some embodiments of the present disclosure.The semiconductor package 300B is similar to the semiconductor package300A as shown in FIG. 4C, difference therebetween will be discussed, andthe same part will not be described again.

Referring to FIG. 4D, the second heat dissipation layer 475-1 of theheat dissipation module 480 further covers a sidewall of the first heatdissipation layer 470 and a back side 130 b of the molding compound 130.In some embodiments, the second heat dissipation layer 475-1 may beconformally disposed on the adhesive material 360 and the first heatdissipation layer 470. In some embodiments, after the steps of formingthe second heat dissipation layer 475 and removing the mask pattern PR(as shown in FIG. 4A), the step of forming the second heat dissipationlayer 475 is repeated again, so as to form the second heat dissipationlayer 475′ on the underlying second heat dissipation layer 475. That is,the second heat dissipation layer 475-1 includes the second heatdissipation layer 475 and the second heat dissipation layer 475′. Thesecond heat dissipation layer 475′ covers a top surface and a sidewallof the underlying second heat dissipation layer 475, and further coversa top surface of the adhesive material 360.

In alternative embodiments, the step of removing the mask pattern PR(shown in FIG. 4B) precedes the step of forming the second heatdissipation layer 475-1. In addition, the second heat dissipation layer475-1 may be formed by applying one or more plating processes.

As compared to a package-on-package (POP) structure, the back sides ofthe semiconductor dies in the semiconductor package according to someembodiments of the present disclosure can be directly contacted with theheat dissipation module. As such, a heat path can be directly formed atthe back sides of the semiconductor dies. Therefore, an efficient heatdissipation can be attained in the semiconductor package. In addition,as compared to the POP structure, multiple semiconductor dies in thesemiconductor package according to some embodiments in the presentdisclosure can be electrically coupled through the redistributionstructure. Thus, a data transmission speed among the semiconductor diescan be improved. In some embodiments, the singulation process can beperformed after the heat dissipation module is disposed on the backsides of the semiconductor dies. As such, a mechanical strength of theto-be-singulated package structure (also known as a reconstructed wafer)can be enhanced. Thus, a warpage of the package structure including thesemiconductor dies and the molding compound can be reduced during thesingulation process. Furthermore, in some embodiments, by disposing theadhesive material between the heat dissipation module and the moldingcompound, an adhesive property between the heat dissipation module andthe molding compound can be improved. Therefore, a delamination problemat an interface between the heat dissipation module and the moldingcompound can be avoided.

In some embodiments of the present disclosure, a semiconductor packageis provided. The semiconductor package includes a first semiconductordie, a second semiconductor die, a molding compound, a heat dissipationmodule and an adhesive material. The first and second semiconductor diesare different types of dies and are disposed side by side. The moldingcompound encloses the first and second semiconductor dies. The heatdissipation module is located directly on and in contact with the backsides of the first and second semiconductor dies. The adhesive materialis filled and contacted between the heat dissipation module and themolding compound. The semiconductor package has a central region and aperipheral region surrounding the central region. The first and secondsemiconductor dies are located within the central region. A sidewall ofthe heat dissipation module, a sidewall of the adhesive material and asidewall of the molding compound are substantially coplanar with oneanother.

In some embodiments of the present disclosure, a semiconductor packageis provided. The semiconductor package includes a first semiconductordie, a second semiconductor die, a molding compound, an adhesivematerial and a heat dissipation module. The first and secondsemiconductor dies are different types of dies and are disposed side byside. The molding compound encloses the first and second semiconductordies. The adhesive material is disposed over and in direct contact withthe back sides of the first and second semiconductor dies and themolding compound. The heat dissipation module comprises a plurality ofheat dissipation layers stacked on the adhesive material. Thesemiconductor package has a central region and a peripheral region. Thecentral region is surrounded by the peripheral region. The first andsecond semiconductor dies and a central portion of the molding compoundlocated between the first and second semiconductor dies are within thecentral region. A peripheral portion of the molding compound surroundingthe first and second semiconductor dies is located within the peripheralregion. The adhesive material spans across the central region and theperipheral region.

In some embodiments of the present disclosure, a manufacturing method ofsemiconductor package is provided. The manufacturing method ofsemiconductor package includes: placing a first semiconductor die and asecond semiconductor die on a carrier, wherein the first and secondsemiconductor dies are different types of dies and are disposed side byside; forming a molding compound on the carrier enclosing sidewalls ofthe first and second semiconductor dies and exposing front sides of thefirst and second semiconductor dies; forming a redistribution structureon the front sides of the first and second semiconductor dies and on themolding compound; removing the carrier, to expose a back side of themolding compound and back sides of the first and second semiconductordies; disposing a heat dissipation module on the back sides of the firstand second semiconductor dies and the molding compound. The adhesivematerial is located between the molding compound and the heatdissipation module.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the disclosed embodimentswithout departing from the scope or spirit of the disclosure. In view ofthe foregoing, it is intended that the disclosure covers modificationsand variations provided that they fall within the scope of the followingclaims and their equivalents.

What is claimed is:
 1. A semiconductor package, comprising: first andsecond semiconductor dies, disposed side by side, and laterally spacedapart from each other; a molding compound, laterally encapsulating eachof the first and second semiconductor dies; a redistribution structure,disposed along a first side of an encapsulated structure comprising themolding compound and the first and second semiconductor dies; aconductive adhesive material, entirely covering a second side of theencapsulated structure; and a heat dissipation module, entirely coveringthe adhesive material, and comprising a stack of heat dissipation layerseach formed of a metallic material different from a metallic materialfor forming the conductive adhesive material, wherein sidewalls of theheat dissipation module are substantially coplanar with sidewalls of theadhesive material.
 2. The semiconductor package according to claim 1,wherein the semiconductor package has substantially vertical sidewallsdefined by the sidewalls of the heat dissipation module, the sidewallsof the adhesive material, sidewalls of the molding compound andsidewalls of the redistribution structure.
 3. The semiconductor packageaccording to claim 1, wherein the heat dissipation layers comprise: afirst heat dissipation layer, in direct contact with the conductiveadhesive material, and entirely covering the conductive adhesivematerial; and a second heat dissipation layer, covering the first heatdissipation layer.
 4. The semiconductor package according to claim 3,wherein a thickness of the first heat dissipation layer ranges from 1 μmto 100 μm, and a thickness of the second heat dissipation layer rangesfrom 0.1 μm to 30 μm.
 5. The semiconductor package according to claim 3,wherein the second heat dissipation layer is configured to protect thefirst heat dissipation layer from being oxidized.
 6. The semiconductorpackage according to claim 3, wherein the metallic material for formingthe first heat dissipation layer comprises copper, and the metallicmaterial for forming the second heat dissipation layer comprises nickel.7. The semiconductor package according to claim 3, wherein the secondheat dissipation layer is stacked on the first heat dissipation layer,and the sidewalls of the heat dissipation module are defined bysidewalls of the second heat dissipation layer and sidewalls of thefirst heat dissipation layer.
 8. The semiconductor package according toclaim 3, wherein the second heat dissipation layer covers a top surfaceand sidewalls of the first heat dissipation layer.
 9. The semiconductorpackage according to claim 8, wherein the sidewalls of the heatdissipation module are solely defined by sidewalls of the second heatdissipation layer.
 10. The semiconductor package according to claim 8,wherein sidewalls of the first heat dissipation layer are laterallyrecessed from the sidewalls of the heat dissipation module.
 11. Thesemiconductor package according to claim 8, wherein a peripheral portionof the second heat dissipation layer is in direct contact with theconductive adhesive material.
 12. The semiconductor package according toclaim 1, wherein the metallic for forming the conductive adhesivematerial comprises titanium, tantalum, chromium or a combinationthereof.
 13. The semiconductor package according to claim 1, wherein theconductive adhesive material is in direct contact with the moldingcompound as well as the first and second semiconductor dies.
 14. Asemiconductor package, comprising: semiconductor dies, disposed side byside, and laterally spaced apart from each other; a molding compound,laterally encapsulating each of the semiconductor dies; a redistributionstructure, disposed along a first side of an encapsulated structurecomprising the molding compound and the semiconductor dies; a conductiveadhesive material, entirely covering a second side of the encapsulatedstructure; a heat dissipation module with a planar top surface, entirelycovering the adhesive material, and comprising a stack of heatdissipation layers each formed of a metallic material different from ametallic material for forming the conductive adhesive material; and apackage substrate, attached to the redistribution structure viaelectrical connectors.
 15. The semiconductor package according to claim14, wherein the semiconductor package has substantially verticalsidewalls defined by sidewalls of the heat dissipation module, theconductive adhesive material, the molding compound and theredistribution structure.
 16. A method for manufacturing a semiconductorpackage, comprising: encapsulating laterally separated semiconductordies by a molding compound; forming a redistribution structure along afirst side of an encapsulated structure comprising the molding compoundand the semiconductor dies; depositing a conductive adhesive materialalong a second side of the encapsulated structure; forming a heatdissipation module on the conductive adhesive material by a series ofplating processes; and performing a singulation process to cut throughthe heat dissipation module, the conductive adhesive material, themolding compound and the redistribution structure.
 17. The method formanufacturing the semiconductor package according to claim 16, whereinthe conductive adhesive material is formed by performing a physicalvapor deposition process.
 18. The method for manufacturing thesemiconductor package according to claim 17, wherein the heatdissipation module comprises a first heat dissipation layer entirelycovering the second side of the encapsulated structure and formed byplating a first metallic material on the encapsulated structure, andcomprises a second heat dissipation layer covering the first heatdissipation layer and formed by plating a second metallic material onthe first heat dissipation layer.
 19. The method for manufacturing thesemiconductor package according to claim 18, wherein the first metallicmaterial comprises copper, the second metallic material comprisesnickel, and a third metallic material for forming the conductiveadhesive material comprises titanium, tantalum, chromium or acombination thereof.
 20. The method for manufacturing the semiconductorpackage according to claim 18, wherein the second heat dissipation layeris in vertical contact and lateral contact with the first heatdissipation layer.